GPD Optoelectronics
An Ingas Photodiode, short for Indium Gallium Arsenide photodiode, is a specialized semiconductor device commonly used for detecting near-infrared (NIR) light. This type of photodiode is engineered with a semiconductor material composition of Indium Gallium Arsenide, offering distinct advantages in sensitivity and performance within the NIR spectral range, typically spanning from around 0.9 to 1.7 micrometers.
7 Manor Parkway, Salem, NH 03079 USA, Salem, New Hampshire, United States, 03079
